q?v~zy??q?v?_rb]{??qcabgq HRO400N10K jan 2016 absolute maximum ratings t a =25 e unless otherwise specified symbol parameter value units v dss drain-source voltage 100 v v gs gate-source voltage 20 v i d drain current t a = 25 e 6.3 a t a = 70 e 5.0 a i dm pulsed drain current (note 1) 25 a e as single pulsed avalanche energy (note 2) 60 mj p d power dissipation t a = 25 e 3.1 w t a = 70 e 2.0 w t j , t stg operating and storage temperature range -55 to +150 e thermal resistance characteristics symbol parameter typ. max. units r jl junction-to-lead -- 24 e /w r ja junction-to-ambient (t ? 10s) -- 40 e /w junction-to-ambient (steady state) -- 75 e /w sop-8 key parameters package & internal circuit HRO400N10K 100v n-channel trench mosfet features application ? high dense cell design ? reliable and rugged ? advanced trench process technology ? power management in inverter system ? synchronous rectification parameter value unit bv dss 100 v i d 6.3 a r ds(on), typ 33 p
q?v~zy??q?v?_rb]{??qcabgq HRO400N10K electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 6.3 a i sm pulsed source-drain diode forward current -- -- 25 v sd source-drain diode forward voltage i s = 6.3 a, v gs = 0 v -- -- 1.3 v trr reverse recovery time i s = 6.3 a, v gs = 0 v di f /dt = 100 a/ v -- 40 -- qrr reverse recovery charge -- 70 -- nc on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 100 -- -- v i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v -- -- 1 3 v ds = 80 v, t j = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 20 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2770 -- ? c oss output capacitance -- 140 -- ? c rss reverse transfer capacitance -- 90 -- ? r g gate resistance v gs = 0 v, v ds = 0 v, f = 1mhz -- 1.2 -- ? dynamic characteristics t d(on) turn-on time v ds = 50 v, i d = 6.3 a, r g = 6 ? -- 36 -- t r turn-on rise time -- 19 -- t d(off) turn-off delay time -- 123 -- t f turn-off fall time -- 22 -- q g total gate charge v ds = 80 v, i d = 6.3 a, v gs = 10 v -- 50 65 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 13 -- nc switching characteristics source-drain diode maximum ratings and characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6.3 a -- 33 40 m ? g fs forward transconductance v ds = 5, i d = 6.3 a -- 16 -- s notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=1mh, i as =9.5a, v dd =25v, r g =25 : , starting t j =25 q c
q?v~zy??q?v?_rb]{??qcabgq HRO400N10K typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 20 40 60 80 100 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0.0 0.4 0.8 1.2 0.1 1 10 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 125 o c 012345 0 20 40 60 v gs top : 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v bottom : 4 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 012345678 0 20 40 60 t j =25 o c * notes : 1. v ds = 5v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 0 102030405060 0 2 4 6 8 10 12 v ds = 80v i d = 6.3a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 153045607590 0 30 60 90 120 v gs = 10v
note : t j = 25 o c r ds(on) [m : ], drain-source on-resistance i d , drain current [a]
q?v~zy??q?v?_rb]{??qcabgq HRO400N10K typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve 25 50 75 100 125 150 0 1 2 3 4 5 6 7 i d , drain current [a] t a , ambient temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5
note : 1. v gs = 10 v 2. i d = 6.3 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 us 10 ms dc 1 ms 100 us operation in this area is limited by r ds(on) * notes : 1. t a = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_rb]{??qcabgq HRO400N10K fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rb]{??qcabgq HRO400N10K fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rb]{??qcabgq HRO400N10K package dimension z v w t _ g
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